CONTROL OF FACET DAMAGE IN GaAs LASER DIODES
- 15 June 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (12), 571-573
- https://doi.org/10.1063/1.1653545
Abstract
Antireflecting films of SiO, applied to one facet of a laser diode, substantially increase the threshold for catastrophic facet failure. Tripling of the allowable peak power from one end of single‐heterojunction ``close‐confinement'' lasers is reported. The increase appears to be too large for a simple model of damage by optical absorption at an imperfection near the surface.Keywords
This publication has 5 references indexed in Scilit:
- Catastrophic degradation in GaAs laser diodesSolid-State Electronics, 1970
- Control of Optical Losses in p-n Junction Lasers by Use of a Heterojunction: Theory and ExperimentJournal of Applied Physics, 1970
- Catastrophic Degradation in GaAs Injection LasersJournal of Applied Physics, 1967
- Excitation of Hypersonic Vibrations by Means of Photoelastic Coupling of High-Intensity Light Waves to Elastic WavesJournal of Applied Physics, 1965
- Stimulated Brillouin Scattering and Coherent Generation of Intense Hypersonic WavesPhysical Review Letters, 1964