Electrical Properties of Cadmium Selenide Evaporated Films

Abstract

Two kinds of electron traps in CdSe evaporated films have been revealed by electrical conductivity measurements. Shallow traps at about 0.13 eV below the conduction band are responsible for the high conductivity of the films deposited at the substrate temperature of 100°C or baked in vacuo after deposition, whereas deep traps at about 0.40 eV below the conduction band are related to the low conductivity of the films deposited at the substrate temperatures above 150°C. These traps are distributed over a wide range of energy.