High endurance ultra-thin tunnel oxide for dynamic memory application
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Future DRAM development and prospects for ferroelectric memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Triple density DRAM cell with Si selective growth channel and NAND-structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- DRAM technology trendPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolationIEEE Transactions on Electron Devices, 1994
- A novel MONOS nonvolatile memory device ensuring 10-year data retention after 10/sup 7/ erase/write cyclesIEEE Transactions on Electron Devices, 1993
- A Surrounding Gate Transistor (SGT) Gain Cell For Ultra High Density DramsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Charge transport and storage of low programming voltage SONOS/MONOS memory devicesSolid-State Electronics, 1990
- Hole and electron current transport in metal-oxide-nitride-oxide-silicon memory structuresIEEE Transactions on Electron Devices, 1989
- Comparison between CVD and thermal oxide dielectric integrityIEEE Electron Device Letters, 1986
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985