On the Kinetics of the Thermal Oxidation of Silicon: I . A Theoretical Perspective

Abstract

This paper provides a perspective overview of the partitioning of the total driving force for the oxidation process into the key parallel subprocesses and delineates the boundary value problems needed to quantitatively connect these components. An over‐all framework is given for viewing all aspects of this process. This constitutes a new and generalized description of oxidation with specific attention to the oxidation of Si. The free volume supply condition required to sustain such a transformation is explicitly given so that attention is focused on vacancy and interstitial formation in the substrate as well as viscous flow in the oxide. An atomistic level model for the oxidation process is given which appears consistent with much of the earlier data; also five possible paths for influencing the rate and character of the oxidation process are described.