Energy-gap narrowing and state filling in semiconductors under intense laser irradiation
- 15 December 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 18 (12), 7033-7037
- https://doi.org/10.1103/physrevb.18.7033
Abstract
Detailed calculations of the time and energy dependence of the distribution function for optically created electrons in the conduction band of Ge are presented. These indicate that state filling in the conduction and valence bands are strongly controlled by energy-gap narrowing induced by the optically generated interacting electrons and holes.Keywords
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