Platinum silicide-aluminum Schottky diode characteristics

Abstract

The effects of heat treatment on platinum silicide Schottky diodes with aluminum metal contacts have been investigated. It has been found that the aluminum reacts with the silicide causing a change in the effective metal‐semiconductor barrier height over a range of approximately 0.25 eV. Schottky diodes with initial platinum silicide characteristics convert to devices with barrier heights characteristic of aluminum after extended heat treatments.