Fano resonances in electronic transport through a single-electron transistor
Top Cited Papers
- 15 July 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 62 (3), 2188-2194
- https://doi.org/10.1103/physrevb.62.2188
Abstract
We have observed asymmetric Fano resonances in the conductance of a single-electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical of single-electron addition to the confined droplet within the transistor, but the origin of the nonresonant path is unclear. A feature of this experimental system, compared to others that show Fano line shapes, is that changing the voltages on various gates allows one to alter the interference between the two paths.Keywords
All Related Versions
This publication has 34 references indexed in Scilit:
- Anomalous Kondo Effect in a Quantum Dot at Nonzero BiasPhysical Review Letters, 1999
- Excitation Spectra of Circular, Few-Electron Quantum DotsScience, 1997
- Mesoscopic Fluctuations of Elastic Cotunneling in Coulomb Blockaded Quantum DotsPhysical Review Letters, 1997
- Mesoscopic Fluctuations of Elastic CotunnelingPhysical Review Letters, 1996
- Resonance line shapes in quasi-one-dimensional scatteringPhysical Review B, 1994
- Fano resonances in quasi-one-dimensional electron waveguidesPhysical Review B, 1993
- Effects of quantum levels on transport through a Coulomb islandPhysical Review B, 1993
- Conductance fluctuations in small disordered conductors: Thin-lead and isolated geometriesPhysical Review B, 1987
- Electrical transport in open and closed systemsZeitschrift für Physik B Condensed Matter, 1987
- On the Scattering and Absorption of Particles by Atomic NucleiPhysical Review B, 1947