Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopy
- 30 June 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 38 (11), 1053-1056
- https://doi.org/10.1016/0038-1098(81)90016-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Excitons bound to neutral donors in InPPhysical Review B, 1978
- The characterisation of the donors in GaAs epitaxial films by far-infrared photoconductive techniquesJournal of Physics D: Applied Physics, 1978
- Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor PhaseJapanese Journal of Applied Physics, 1977
- Silicon as a residual donor in high-purity GaAsApplied Physics Letters, 1974
- Precision verification of effective mass theory for shallow donors in GaAsSolid State Communications, 1971