Fabrication of Ti/TiOx tunneling barriers by tapping mode atomic force microscopy induced local oxidation
- 22 September 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (12), 1733-1735
- https://doi.org/10.1063/1.120019
Abstract
We use an atomic force microscope operating in a dynamic modus, commonly called tapping mode, to completely oxidise through thin 5 nm titaniumfilms using the very local electric field between the tip and the sample. Tapping mode local oxidation minimizes tip degradation and therefore enhances resolution and reliability. By working under a controllable environment and measuring the resistancein situ while oxidising we are able to fabricate well-defined isolating Ti–TiO x –Ti barriers as small as 15 nm. Their conductance shows an exponential dependence on the oxide width, thereby identifying tunneling as the dominant conduction mechanism. From the nonlinear current-voltage characteristic a tunneling barrier height of 178 meV is derived.Keywords
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