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Stress tests on 1.3 μm buried-heterostructure laser diode
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Stress tests on 1.3 μm buried-heterostructure laser diode
Stress tests on 1.3 μm buried-heterostructure laser diode
TI
T. Ikegami
T. Ikegami
KT
K. Takahei
K. Takahei
MF
M. Fukuda
M. Fukuda
KK
K. Kuroiwa
K. Kuroiwa
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1 January 1983
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 19
(8)
,
282-283
https://doi.org/10.1049/el:19830197
Abstract
Preliminary results of the accelerated aging test under stresses of temperature and current are presented. The degradation modes are found to be divided into two patterns which can be mapped in co-ordinates of these stresses.
Keywords
ACCELERATED AGING TEST
1.3 MICRON WAVELENGTH
BURIED-HETEROSTRUCTURE LASER DIODE
SEMICONDUCTOR LASER
STRESS TESTS
DEGRADATION MODES
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Cited by 28 articles