Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals
- 1 July 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 164 (1-4), 159-166
- https://doi.org/10.1016/0022-0248(95)01067-x
Abstract
No abstract availableKeywords
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