CuAlS2 thin-films with the (112) preferred orientation have been prepared for the first time by sulfurization of metallic precursors in a vacuum-sealed quartz ampule at temperatures ranging from 530°C to 850°C. The film had resistivity as low as 62 Ωcm, and exhibited p-type conduction. The structure of the film was characterized by X-ray diffraction, scanning electron microscopy and electron probe micro-analysis. The bandgap estimated by an optical transmission measurement was 3.50 eV, in fair agreement with that of the single crystal.