Effect of high pressure on the electrical properties of amorphous arsenic
- 31 May 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 22 (8), 481-484
- https://doi.org/10.1016/0038-1098(77)91396-5
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Pressure-induced semiconductor-metal transitions in amorphous InSbPhilosophical Magazine, 1976
- Localized states in amorphous arsenicSolid State Communications, 1975
- A continuous random network model with three-fold coordinationPhilosophical Magazine, 1974
- Pressure-induced semiconductor-metal transitions in amorphous Si and GePhilosophical Magazine, 1974
- Electrical and Optical Properties of Amorphous and Monoclinic Selenium under Very High PressurePhysica Status Solidi (b), 1973
- Pressure Dependence of the Refractive Index of Amorphous Lone-Pair SemiconductorsPhysical Review B, 1972
- Theory of hopping conductivity in disordered systemsJournal of Non-Crystalline Solids, 1972
- Is there an intimate relation between amorphous and crystalline semiconductors?Journal of Non-Crystalline Solids, 1972
- Electrical conductivity and chemical bonding in crystalline, glassy and liquid phasesJournal of Non-Crystalline Solids, 1969
- Effect of Pressure on the Absorption Edges of Certain ElementsThe Journal of Chemical Physics, 1959