Kinetic and steady-state effects of illumination on defects in hydrogenated amorphous silicon
- 15 July 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (2), 820-828
- https://doi.org/10.1063/1.343503
Abstract
Nine recombination-driven mechanisms are possible in principle for the kinetics and steady-state effects of illumination on defects in hydrogenated amorphous silicon. By comparing the different mechanisms, and making choices based on the experimental observation that the carrier lifetime varies inversely with the metastable defect (dangling bond) density, these nine are reduced to three. They correspond to recombination that generates metastable defects (1) taking place at metastable defects, (2) being associated with direct electron-hole recombination, or (3) taking place at other specific defect sites in the material. Each of these three models is considered under the assumptions that (a) the rate constants involved are not functions of time, and (b) the rate constants involved are functions of time in a way similar to that observed for the decay of thermally induced defects, described by a stretched exponential formulation. Comparison with experimental data on kinetics as a function of time and light intensity indicates that both models 2a and 1b are capable of describing the reported results. If, however, it is maintained that all defect-related kinetics in amorphous silicon should exhibit the dispersive behavior leading to the stretched exponential description, then only model 1b is acceptable. Experiments for distinguishing between models 2a and 1b are suggested.Keywords
This publication has 9 references indexed in Scilit:
- Reinterpretation of degradation kinetics of amorphous siliconApplied Physics Letters, 1989
- Critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett. 4 5, 1075 (1984)]Applied Physics Letters, 1989
- Kinetics, energetics, and origins of defects in amorphous Si:HApplied Physics Letters, 1988
- Bias dependence of instability mechanisms in amorphous silicon thin-film transistorsApplied Physics Letters, 1987
- Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous siliconPhysical Review Letters, 1987
- Hydrogen Diffusion and Thermal Equilibrium of Electronic States in a-Si:HMRS Proceedings, 1987
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Kinetics of the metastable optically induced ESR ina-Si:HPhysical Review B, 1985
- Review of metastable defects in a-Si:HAIP Conference Proceedings, 1984