Time dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealing
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (7), 512-513
- https://doi.org/10.1063/1.91588
Abstract
The time dependence of the optical reflectivity of Si during pulsed laser annealing at 530 nm has been measured at probe wavelengths 633 and 488 nm. Within experimental error, no difference between the durations of the reflectivity rise at the two wavelengths is observed. This behavior is inconsistent with the assumption that the rise in reflectivity results from a dense electron‐hole plasma but is consistent with melting of the Si surface.Keywords
This publication has 9 references indexed in Scilit:
- Reasons to believe pulsed laser annealing of Si does not involve simple thermal meltingPhysics Letters A, 1979
- Nonthermal pulsed laser annealing of Si; plasma annealingPhysics Letters A, 1979
- Dynamics of Q-switched laser annealingApplied Physics Letters, 1979
- Calculation of the dynamics of surface melting during laser annealingApplied Physics Letters, 1979
- Laser Annealing of Ion-Implanted SemiconductorsScience, 1979
- A melting model for pulsing-laser annealing of implanted semiconductorsJournal of Applied Physics, 1979
- A computer simulation of laser annealing silicon at 1.06 μmApplied Physics Letters, 1979
- Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed siliconApplied Physics Letters, 1978
- Some features of laser annealing of implanted silicon layersRadiation Effects, 1978