A 1.57 W/mm GaAs-based MISFET for high-power and microwave-switching applications
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Picosecond GaAs-based photoconductive optoelectronic detectorsApplied Physics Letters, 1989
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- GaAs Power MESFET's: Design, Fabrication, and PerformanceIEEE Transactions on Microwave Theory and Techniques, 1979