High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 61-66
- https://doi.org/10.1016/s0022-0248(98)00169-9
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation MethodJapanese Journal of Applied Physics, 1996
- Growth of single crystal GaN substrate using hydride vapor phase epitaxyJournal of Crystal Growth, 1990
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989