Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devices
- 2 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (1-2), 301-308
- https://doi.org/10.1016/0022-0248(91)90377-h
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Laser application of Pb1-xSrxS films prepared by hot wall epitaxySemiconductor Science and Technology, 1990
- Heteroepitaxial Pb1−xSnxSe on Si infrared sensor array with 12 μm cutoff wavelengthApplied Physics Letters, 1989
- Diode laser spectrometer for monitoring up to five atmospheric trace gases in unattended operationApplied Optics, 1989
- PbSnTe double-heterostructure lasers and PbEuTe double-heterostructure lasers by hot-wall epitaxyJournal of Applied Physics, 1989
- Near-room-temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniquesApplied Physics Letters, 1988
- Infrared double-heterostructure diode lasers made by molecular beam epitaxy of Pb1−xEuxSeApplied Physics Letters, 1988
- Pb1−xEuxS films prepared by hot wall epitaxyApplied Physics Letters, 1988
- Lead strontium telluride and lead barium telluride grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1987
- MBE of Pb1−xEuxSe for the use in IR devicesJournal of Crystal Growth, 1987
- Lead strontium sulfide and lead calcium sulfide, two new alloy semiconductorsPhysical Review B, 1982