A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- 1 June 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (6A), L431-433
- https://doi.org/10.1143/jjap.24.l431
Abstract
Using Si atomic-planar-doping technology, a new heterostructure, called “Planar-Doped Quantum Well (PD-QW) Heterostructure”, which has a single Si-doped Ga plane with sheet concentration of 0.6–4 ×1012 cm-2 in an AlAs-GaAs-AlAs quantum well structure as a 2DEG supplying layer was developed. It exhibited 2DEG mobility of 8.7 ×104cm2/Vs at 77 K with sheet concentration of 1.0 ×1012cm-2, in addition to much reduced persistent photoconductivity at low temperatures. The sheet resistivity of the 2DEG layer in this material (about 70 Ω/\Box at 77 K) is the lowest observed so far in selectively doped single-interface heterostructures.Keywords
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