Low-energy electron-beam lithography using calixarene

Abstract

Low-energy electron-beam lithography using calixarene as a negative electron resist has been investigated in the energy range between 0.5 and 20 keV. The suitability of electron energies down to 2 keV with a writing resolution of about 10 nm is clearly demonstrated. At low electron energies the required electron dose is drastically reduced. Moreover, irradiation damage during the exposure of a high-mobility two-dimensional electron gas using calixarene plays no significant role in the low-energy regime.