Unpinning the GaAs Fermi level with thin heavily doped silicon overlayers
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (1), 88-95
- https://doi.org/10.1109/16.43804
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Wide range of Schottky barrier height for metal contacts to GaAs controlled by Si interface layersJournal of Vacuum Science & Technology B, 1988
- Metal contacts to GaAs with 1 eV Schottky barrier heightApplied Physics Letters, 1988
- Fermi-level pinning and heavily doped overlayersJournal of Vacuum Science & Technology A, 1988
- Variation of n-GaAs (100) interface Fermi level by Ge and Si overlayersJournal of Vacuum Science & Technology B, 1987
- The Si/GaAs(110) heterojunction discontinuity: Amorphous versus crystalline overlayersJournal of Vacuum Science & Technology A, 1987
- Fermi-level position at a semiconductor-metal interfacePhysical Review B, 1983
- Summary Abstract: Are they really Schottky barriers after all?Journal of Vacuum Science and Technology, 1982
- Control of Schottky barrier height using highly doped surface layersSolid-State Electronics, 1976
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947