Effects of Proton Implantation on Amorphous SiO2 Predamaged by Si Implantation
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10A), L1846
- https://doi.org/10.1143/jjap.29.l1846
Abstract
The effects of H implantation on amorphous SiO2 preimplanted with Si have been studied through electron paramagnetic resonance (EPR). It is shown that both the width and intensity of the EPR spectra of the E1 ′ centres generated by Si implantation increase upon H implantation, in contrast to the results for Ar and succeeding H implantation. The difference is ascribed to the difference in the effective cross section of annihilation under proton implantation of the E1 ′ centres in Si- and Ar-implanted SiO2. The result supports the previously propsed model in which the combination of Si and interstitial O reduces the annihilation of the E1 ′ centres.Keywords
This publication has 13 references indexed in Scilit:
- Anomalous Defect Processes in Silicon-Implanted SiO2Japanese Journal of Applied Physics, 1989
- Radiation damage in vitreous fused silica induced by MeV ion implantationJournal of Non-Crystalline Solids, 1988
- Characterization of defects formed in amorphous SiO2 by high energy ions using electron spin resonance and optical spectroscopyNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Influence of ionizing radiation on predamaged, amorphous SiO2Journal of Applied Physics, 1985
- Characterization of three E'-center variants in X- and γ-irradiated high purity a-SiO2Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Radiation damage in silica-based glasses: Point defects, microstructural changes and possible implications on etching and leachingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Comparison of heavy-ion, proton and electron irradiation effects in vitreous silicaRadiation Effects, 1982
- Fundamental Defect Centers in Glass: The Peroxy Radical in Irradiated, High-Purity, Fused SilicaPhysical Review Letters, 1979
- Oxygen-associated trapped-hole centers in high-purity fused silicasJournal of Non-Crystalline Solids, 1979
- Dipolar Broadening of Magnetic Resonance Lines in Magnetically Diluted CrystalsPhysical Review B, 1953