Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel

Abstract

Ballistic one-dimensional (1-D) channels are fabricated by focused Ga ion beam scanning on two different modulation-doped wafers. Higher electron density causes a smaller transition region length between the 1-d channel and two-dimensional (2-D) ohmic regions. A ballistic 1-D channel with a smaller transition region shows conductance oscillation in addition to quantized step structures. This oscillation is explained by the interference of electron waves reflected at both ends of the 1-D channel. On the other hand, a ballistic channel with a larger transition region shows quantized step structures without conductance oscillation.