Electron-Energy-Loss Scattering near a Single Misfit Dislocation at the GaAs/GaInAs Interface
- 24 November 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 57 (21), 2729-2732
- https://doi.org/10.1103/physrevlett.57.2729
Abstract
Spatially resolved electron-energy-loss scattering has been used to study changes in the inelastic scattering near the bulk band-gap energy for locations near the GaAs- As interface. We observe the expected bulk band gap on either side of the interface. At a single interface-misfit dislocation we observe scattering which is consistent with an excitation of transitions between a localized state near the dislocation and the crystal conduction band. Within this interpretation, the energy of the state is estimated to be 0.7 ± 0.05 eV above the GaAs valence-band maximum.
Keywords
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