Heteroepitaxial Growth of GaN1-xPx(x\lesssim0.06) on Sapphire Substrates

Abstract

Gallium nitride phosphide (GaN_1-x P _x ) was epitaxially deposited on (0001) sapphire substrates by the vapor phase reaction of the Ga–Br₂–NH₃–PH₃–N₂ system. It was found that the composition x and the growth rate of the GaN_1-x P _x single crystal strongly depend on the substrate temperature and the flow rate of PH₃ introduced into a reaction tube. The composition x increased with decreasing substrate temperature. The maximum composition x obtained was 0.064 at a substrate temperature of 1000degC. The growth rate increased with increasing flow rate of PH₃ introduced into the reaction tube. At a substrate temperature of 1030degC, the growth rate of GaN_1-x P _x (x≈0.05) was 22 times larger than that of GaN. The diffraction lines observed on back-reflection divergent beam patterns of the GaN_1-x P _x single crystal were broad and did not show the separation due to Kα₁ and Kα₂ radiation.