Submicrosecond X-ray lithography
- 1 January 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (24), 781-782
- https://doi.org/10.1049/el:19780528
Abstract
X-rays from laser-heated plasmas were used to replicate features as fine as 750 nm in the positive resist polybutene-1-sulfone (p.b.s.). The measured sensitivities of p.b.s. to pulsed and d.c. X-rays (≈ 109 ratio in exposure rate) are similar (no reciprocity loss). Laser-plasma X-rays produced only small (0.25 V) flat-band shifts in m.o.s. capacitors at irradiation levels sufficient to expose p.b.s.Keywords
This publication has 1 reference indexed in Scilit:
- X-ray lithographyPublished by Springer Nature ,1977