Comparative Study Of GaAs Grown By Organometallic Chemical Vapor Deposition (OMCVD) Using Trimethyl And Triethyl Gallium Sources

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Abstract
Atmospheric and low pressure (76 torr) epitaxial growth of gallium arsenide (GaAs) from trimethyl gallium (TMG) and triethyl gallium (TEG) has been studied. The results indicate that both TMG and TEG are capable of yielding high purity GaAs epitaxial layers. TMG is the preferred compound when large area uniform layers are desired at all reactor pressures. TEG is recommended only in those cases where carbon acceptor free GaAs is required and low pressure capability is available.