Growth of IrSi3 by molecular beam epitaxy
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1-2), 343-348
- https://doi.org/10.1016/0040-6090(90)90430-l
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- IrSi Schottky-barrier infrared detectors with 10- mu m cutoff wavelengthIEEE Electron Device Letters, 1988
- Localized epitaxial growth of IrSi3 on (111) and (001) siliconJournal of Applied Physics, 1988
- Formation of iridium silicides from Ir thin films on Si substratesJournal of Applied Physics, 1979