Abstract
The ionized-impurity-limited mobility of degenerate n-type α-Sn is calculated taking into account the variation of effective mass with Fermi level and the p-like character of the α-Sn conduction-band wave function. Excellent agreement with experiment is obtained over the concentration range 6×1014 to 1×1017 electrons/cm3, using Fermi-Thomas screening and a q-independent dielectric constant. These results strongly suggest that the random phase approximation considerably overestimates the interband contribution to the dielectric function.