Measurement of Voltage-Current Characteristics of Junction Diodes at High Forward Bias

Abstract

The validity of the voltage-current relation I^1/2 = S( V − V₀) is demonstrated for a wide range of planar p-n. junction diode structures up to current densities in excess of 10³ A/cm². The results are interpreted quantitatively in the light of theoretical treatment. It is concluded that the current flow in a strongly forward biased p-n junction is essentially space-charge limited and represents a complete analogon of the vacuum diode ease. It is shown that the same voltage-current relation is applicable to non-planar geometries and that there is an upper limit to its validity, as a result of recharging of donor and acceptor levels.