Adsorbed states of and on the Si(111)(√3 × √3 )R30°-B surface: Thermal-desorption and electron-energy-loss-spectroscopy studies
- 15 December 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (23), 17440-17449
- https://doi.org/10.1103/physrevb.50.17440
Abstract
Adsorbed states of and on a Si(111)(√3 × √3 )R30°-B surface have been studied by the use of thermal desorption and high-resolution electron-energy-loss spectroscopy. At 90 K, a bulklike multilayer, hydrogen bonded to a chemisorbed one, and molecularly chemisorbed exist on the (√3 × √3 )R30°-B surface. These desorb at ∼115, 140, and 170 K, respectively. Chemisorbed has a very low NH stretching energy of ∼370 meV, and its N-H bonds are significantly weakened. A 2.0-eV loss, which corresponds to the electronic transition from an occupied backbond state to an empty dangling-bond state of the Si adatom on the (√3 × √3 )R30°-B surface, is removed upon adsorption. It is proposed that chemisorbed is coordinated to the Si adatom on the surface. does not chemisorb on the (√3 × √3 )R30°-B surface even at 90 K, but only physisorbs at <160 K. The adsorbed states of and on the (√3 × √3 )R30°-B surface are quite different from those on clean Si surfaces, and the reactivity criterion of the surface is discussed. It is also found that the (√3 × √3 )R30°-B surface has few defects when a large number of B atoms (∼7× ) exists in the subsurface, which was evaluated by analyzing the surface-plasmon loss.
Keywords
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