Silicon-on-insulator 'gate-all-around device'
Top Cited Papers
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 199, 595-598
- https://doi.org/10.1109/iedm.1990.237128
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Modes of operation and radiation sensitivity of ultrathin SOI transistorsIEEE Transactions on Electron Devices, 1990
- A Fast and Precise Specimen Preparation Technique for TEM Investigation of Prespecified Areas of Semiconductor DevicesMRS Proceedings, 1990
- Assessments of SOI technologies for hardeningMicroelectronic Engineering, 1988
- Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performanceIEEE Electron Device Letters, 1987
- Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gateSolid-State Electronics, 1984