Growth of Ga0.47In0.53As on InP by low-pressure m.o. c.v.d.

Abstract

The first heteroepitaxy is reported of Ga0.47In0.53As on InP by low-pressure metalorganic chemical vapour deposition (m.o. c.v.d.). Triethylindium (t.e.i.) and triethylgallium (t.e.g) were used as group III sources, and arsine as the group V source. These Ga0.47In0.53As epilayers exhibit high electron mobility (7.74 cm2 V−1 s−1 for a total impurity concentration of 2.5 × 1016 cm−3 at 300 K) and a photoluminescence efficiency comparable to l.p.e. layers. The lattice mismatch is only Δa0/a0 ≃ 4 × 10−4. Our mobility measurements indicate that m.o. c.v.d. Ga0.47In0.53As is a promising material for microwave device applications. The first heteroepitaxy is reported of Ga_0.47In_0.53As on InP by low-pressure metalorganic chemical vapour deposition (m.o. c.v.d.). Triethylindium (t.e.i.) and triethylgallium (t.e.g) were used as group III sources, and arsine as the group V source. These Ga_0.47In_0.53As epilayers exhibit high electron mobility (7.74 cm² V⁻¹ s⁻¹ for a total impurity concentration of 2.5 × 10¹⁶ cm⁻³ at 300 K) and a photoluminescence efficiency comparable to l.p.e. layers. The lattice mismatch is only Δa₀/a₀ ≃ 4 × 10⁻⁴. Our mobility measurements indicate that m.o. c.v.d. Ga_0.47In_0.53As is a promising material for microwave device applications.