Fermi-Level Pinning at the Sb/GaAs(110) Surface Studied by Scanning Tunneling Spectroscopy
- 25 July 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 61 (4), 447-450
- https://doi.org/10.1103/physrevlett.61.447
Abstract
Antimony overlayers on the GaAs(110) surface have been studied by scanning tunneling microscopy and spectroscopy. On ordered Sb terraces, a characteristic spectrum of surface states is observed. Near the edges of Sb islands, additional states are found within the band-gap region. These band-gap states comprise two separate bands of filled and empty states, with the surface Fermi level pinned between the two bands.Keywords
This publication has 30 references indexed in Scilit:
- Inverse photoemission from surface and interface states of III–V semiconductorsJournal of Vacuum Science & Technology B, 1987
- Scanning tunneling microscopy—from birth to adolescenceReviews of Modern Physics, 1987
- Optical-Emission Properties of Interface States for Metals on III-V Semiconductor CompoundsPhysical Review Letters, 1986
- Direct Observation of Adsorbate-Induced Band-Gap States on GaAs(110)Physical Review Letters, 1986
- Scanning tunneling microscopySurface Science, 1985
- Origin of surface and metal-induced interface states in InPPhysical Review B, 1984
- Schottky Barrier Heights and the Continuum of Gap StatesPhysical Review Letters, 1984
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979