Improvement of lattice site location of Ga implanted into Al after pulsed electron beam annealing
- 1 August 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (3), 298-300
- https://doi.org/10.1063/1.91913
Abstract
The effect of pulsed electron beam annealing (PEBA) on the lattice location and impurity distribution of Ga ions implanted into Al single crystals has been compared with the thermal annealing behavior of this ion/target system. While with thermal annealing only slight improvement of the lattice site occupation was observed after PEBA within experimental accuracy, all implanted impurities occupied perfect lattice sites. In the thermal treatment the Ga atoms partially diffused out of the implanted region; with PEBA, however, the implanted impurity distribution remained unchanged.Keywords
This publication has 2 references indexed in Scilit:
- Dependence of defect structures on implanted impurity species in Al single crystalsNuclear Instruments and Methods, 1980
- Pulsed-electron-beam annealing of ion-implantation damageJournal of Applied Physics, 1979