Improvement of lattice site location of Ga implanted into Al after pulsed electron beam annealing

Abstract

The effect of pulsed electron beam annealing (PEBA) on the lattice location and impurity distribution of Ga ions implanted into Al single crystals has been compared with the thermal annealing behavior of this ion/target system. While with thermal annealing only slight improvement of the lattice site occupation was observed after PEBA within experimental accuracy, all implanted impurities occupied perfect lattice sites. In the thermal treatment the Ga atoms partially diffused out of the implanted region; with PEBA, however, the implanted impurity distribution remained unchanged.