I n s i t u Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow discharges

Abstract

In situ Auger electron spectroscopy has been combined with in situ etch‐rate measurements, using quartz crystal microbalances, to study the plasma etching of Si and SiO₂ surfaces rf biased at −100 V in CF₄‐H₂ glow discharges. More carbon deposition was observed on the Si surface relative to the SiO₂ surface as hydrogen was added to the CF₄ plasma. This observation is consistent with a previously suggested model for the large SiO₂‐to‐Si etch‐rate ratios observed in CF₄‐H₂ discharges.