Thin-film ferroelectrics of PZT of sol-gel processing
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
- Vol. 35 (1), 80-81
- https://doi.org/10.1109/58.4153
Abstract
The ferroelectric effect has been demonstrated for sol-gel derived lead zirconate titanate (PZT) (53/47) thin films. The respective values of coercive field and remanent polarization were 4*10/sup 6/ V/m and 0.36 C/m/sup 2/. The thin-film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory, and integrated optical circuit applications.<>Keywords
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