Compensation in GaAs crystals due to anti-structure disorder
- 1 December 1984
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 35 (4), 255-261
- https://doi.org/10.1007/bf00617176
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- antisite defect in GaAsPhysical Review B, 1983
- Theoretical study of native defects in III-V semiconductorsPhysical Review B, 1983
- The role of deep-level centers and compensation in producing semi-insulating GaAsJournal of Applied Physics, 1983
- Deep-center photoluminescence in undoped semi-insulating GaAs: 0.68 eV band due to the main deep donorSolid State Communications, 1982
- Photo‐EPR of deformation‐produced defects in GaAsCrystal Research and Technology, 1981
- Submillimeter EPR evidence for the As antisite defect in GaAsSolid State Communications, 1980
- Effect of plastic deformation on the EPR spectrum of semi-insulating GaAs:CrPhysica Status Solidi (a), 1980
- Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type SemiconductorsJournal of the Electrochemical Society, 1975
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965