A MOCVD reactor safety system for a production environment
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1), 497-501
- https://doi.org/10.1016/0022-0248(84)90456-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Studies of GaAs and AlGaAs layers grown by OM-VPEJournal of Crystal Growth, 1981
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975