Metal oxide varistor-A multijunction thin-film device
- 15 January 1974
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (2), 75-76
- https://doi.org/10.1063/1.1655100
Abstract
The physical origin of the highly nonlinear current‐voltage relation in metal oxide varistors is shown to be consistent with Fowler‐Nordheim tunneling.Keywords
This publication has 4 references indexed in Scilit:
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- Nonohmic Properties of Zinc Oxide CeramicsJapanese Journal of Applied Physics, 1971
- Conduction in thin dielectric filmsJournal of Physics D: Applied Physics, 1971
- Poole-Frenkel conduction in amorphous solidsPhilosophical Magazine, 1971