The design and realization of a high reliability semiconductor laser for single-mode fiber-optical communication links
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 6 (9), 1424-1434
- https://doi.org/10.1109/50.7892
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Reliability in InGaAsP/InP buried heterostructure 1.3 µm lasersIEEE Journal of Quantum Electronics, 1983
- Dark defects in InGaAsP/InP double heterostructure lasers under accelerated agingJournal of Applied Physics, 1983
- Stress-induced defect migration in InP/InGaAsP double-heterostructure wafersMaterials Letters, 1982
- Nature of dark defects revealed in InGaAsP/InP double heterostructure light emitting diodes aged at room temperatureJournal of Applied Physics, 1982
- Transmission electron microscope observation of dark defects appearing in InGaAsP/InP double heterostructure lasers aged at accelerated operationApplied Physics Letters, 1982
- Degraded InGaAsP/InP double heterostructure laser observation with electron probe microanalyzerApplied Physics Letters, 1982
- High-temperature degradation of InGaAsP/InP light emitting diodesJournal of Applied Physics, 1981
- Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated OperationJapanese Journal of Applied Physics, 1981
- Transmission electron microscope observation of dark-spot defects in InGaAsP/InP double-heterostructure light-emitting diodes aged at high temperatureApplied Physics Letters, 1980
- 1500-h continuous cw operation of double-heterostructure GaInAsP/InP lasersApplied Physics Letters, 1977