A closely spaced (50 μm) array of 16 individually addressable buried heterostructure GaAs lasers

Abstract
An array of 16 individual addressable lasers with 50-μm center spacing has been monolithically integrated on a GaAs chip and cw bonded to a Si submount and copper heat sink. The lasers have the loss stabilized buried heterostructure geometry with separate optical and carrier confinement. The advantages of this laser geometry for integration into arrays are described.