The influence of Na on metastable defect kinetics in CIGS materials
- 1 February 2009
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 517 (7), 2277-2281
- https://doi.org/10.1016/j.tsf.2008.10.140
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- IntrinsicCenters in Ternary Chalcopyrite SemiconductorsPhysical Review Letters, 2008
- Grain boundary compositions in Cu(InGa)Se2Journal of Applied Physics, 2007
- Study of the Electronic Properties of Matched Na-Containing and Reduced-Na CuInGaSe2 Samples Using Junction Capacitance MethodsMRS Proceedings, 2007
- Light- and bias-induced metastabilities in Cu(In,Ga)Se2 based solar cells caused by the (VSe-VCu) vacancy complexJournal of Applied Physics, 2006
- The effect of Na in polycrystalline and epitaxial single-crystal CuIn1−xGaxSe2Thin Solid Films, 2005
- Sodium incorporation strategies for CIGS growth at different temperaturesThin Solid Films, 2004
- Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profilingJournal of Applied Physics, 2004
- Na effects on CuInSe2: Distinguishing bulk from surface phenomenaJournal of Applied Physics, 2002
- Effect of structural disorder on the Urbach energy in Cu ternariesPhysical Review B, 2001
- Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gapJournal of Applied Physics, 1996