Secondary Recrystallization of Silicon-Iron by Solute-Induced Boundary Restraint

Abstract

The secondary recrystallization of silicon-iron requires that normal grain growth be restrained. This restraint has been attributed to dispersions of small inclusions usually identified as sulfides or nitrides. In this paper, it is shown that sulfur and nitrogen, when present together as solutes, will enable secondary recrystallization to occur.