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Highly efficient 1.5GHz si power MOSFET for digital cellular front end
Home
Publications
Highly efficient 1.5GHz si power MOSFET for digital cellular front end
Highly efficient 1.5GHz si power MOSFET for digital cellular front end
IY
I. Yoshida
I. Yoshida
MK
M. Katsueda
M. Katsueda
SO
S. Ohtaka
S. Ohtaka
YM
Y. Maruyama
Y. Maruyama
TO
T. Okabe
T. Okabe
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25 August 2005
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
p.
156-157
https://doi.org/10.1109/ispsd.1992.991253
Abstract
No abstract available
Keywords
MOSFET CIRCUITS
POWER MOSFET
CAPACITANCE
CUTOFF FREQUENCY
POWER AMPLIFIERS
HIGH POWER AMPLIFIERS
POWER GENERATION
VOLTAGE
TELEPHONY
TRANSCONDUCTANCE
Cited by 16 articles