The reliability of (AlGa)As CW laser diodes
- 1 February 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (2), 186-196
- https://doi.org/10.1109/jqe.1980.1070446
Abstract
No abstract availableThis publication has 56 references indexed in Scilit:
- Deep-level luminescence in AlxGa1−xAs double-heterostructure lasersApplied Physics Letters, 1979
- The reliability of a practical Ga1-xAlxAs laser deviceIEEE Journal of Quantum Electronics, 1979
- Deep level associated with the slow degradation of GaAlAs DH laser diodesApplied Physics Letters, 1978
- Effect of edges on the reliability of GaAs and (AlGa) as heterojunction ledsJournal of Electronic Materials, 1977
- Elastically enhanced nonradiative recombination at AlxGa1−xAs-GaAs heterointerfaceApplied Physics Letters, 1976
- Influence of device fabrication parameters on gradual degradation of (AlGa)As cw laser diodesApplied Physics Letters, 1974
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974
- Observation of Recombination-Enhanced Defect Reactions in SemiconductorsPhysical Review Letters, 1974
- Degradation of injection lasersJournal of Luminescence, 1973
- Permanent degradation of GaAs tunnel diodesSolid-State Electronics, 1964