What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?
- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 38 (9), 1253-1259
- https://doi.org/10.1109/jqe.2002.802441
Abstract
We analyze the high-temperature continuous-wave performance of 1.3-/spl mu/m AlGaInAs/InP laser diodes grown by digital alloy molecular-beam epitaxy. Commercial laser software is utilized that self-consistently combines quantum-well bandstructure and gain calculations with two-dimensional simulations of carrier transport, wave guiding, and heat flow. Excellent agreement between simulation and measurements is obtained by careful adjustment of material parameters in the model. Joule heating is shown to be the main heat source; quantum-well recombination heat is almost compensated for by Thomson cooling. Auger recombination is the main carrier loss mechanism at lower injection current. Vertical electron escape into the p-doped InP cladding dominates at higher current and causes the thermal power roll-off. Self-heating and optical gain reduction are the triggering mechanisms behind the leakage escalation. Laser design variation is shown to allow for a significant increase in the maximum output power at high temperatures.Keywords
This publication has 17 references indexed in Scilit:
- Strained 1.3 [micro sign]m MQW AlGaInAs lasers grown by digital alloy MBEElectronics Letters, 2000
- Facet coating effects on 1.3 and 1.55 μm strained multiple-quantum-well AlGaInAs/InP laser diodesIEE Proceedings - Optoelectronics, 1999
- Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers: experiment and modelingIEEE Journal of Quantum Electronics, 1999
- High performance phosphorus-free 1.3 μm AlGaInAs/InP MQW lasersJournal of Crystal Growth, 1999
- Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasersApplied Physics Letters, 1999
- Simulation of carrier transport and nonlinearities in quantum-well laser diodesIEEE Journal of Quantum Electronics, 1998
- Explanation for the temperature insensitivity of the Auger recombination rates in 1.55 μm InP-based strained-layer quantum-well lasersApplied Physics Letters, 1995
- Novel design of AlGaInAs-InP lasers operating at 1.3 μmIEEE Journal of Quantum Electronics, 1995
- Efficient band-structure calculations of strained quantum wellsPhysical Review B, 1991
- The effect of intervalence band absorption on the thermal behavior of InGaAsP lasersIEEE Journal of Quantum Electronics, 1983