The Effects of Doping Profile on Reflection-Type Impatt Diode Amplifiers
- 1 August 1971
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 1-4
- https://doi.org/10.1109/euma.1971.331417
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Large-Signal Equivalent Circuits of Avalanche Transit-Time DevicesIEEE Transactions on Microwave Theory and Techniques, 1970
- Negative resistance in p-n junctions under avalanche breakdown conditions, part IIEEE Transactions on Electron Devices, 1966