Au-n-Type GaAs Schottky Barrier and Its Varactor Application
- 1 January 1964
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 43 (1), 215-224
- https://doi.org/10.1002/j.1538-7305.1964.tb04063.x
Abstract
Evidence is presented to show that Au-n-type GaAs rectifying contacts are majority carrier rectifiers of the Schottky type. These diodes may be characterized by a Richardson constant of 2060 amp/cm2 deg2 and barrier heig...Keywords
This publication has 4 references indexed in Scilit:
- Anomalously high minority carrier injection in Schottky diodesIEEE Transactions on Electron Devices, 1963
- Semiconductor junction varactors with high voltage-sensitivityIEEE Transactions on Electron Devices, 1963
- Conduction properties of the Au-n-type—Si Schottky barrierSolid-State Electronics, 1963
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942