Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy

Abstract

By combining data from temperature- and injection-dependent lifetime spectroscopy (TDLS and IDLS) measured by means of the microwave-detected photoconductance decay technique and the quasi-steady state photoconductance technique, respectively, the exact electronic structure of the metastable defect in standard boron-doped Czochralski (Cz) silicon has been determined. A detailed Shockley–Read–Hall analysis of the entire TDLS curve reveals that the Cz-specific defect acts as an attractive Coulomb center ${\mathrm{[\sigma }}_n{\mathrm{(T)=\sigma }}_{\text{n0}}{T}^{\text{−2}}]$ which is localized in the upper band-gap half at $E_C{\mathrm{-E}}_t\text{=0.41\hspace{0.17em}}\mathrm{eV}$ and has an electron/hole capture cross section ratio ${\mathrm{k=\sigma }}_n{\mathrm{/\sigma }}_p\text{=9.3.}$ The accuracy of this determination manifests itself by the fact that the corresponding IDLS curve can be simulated with the same parameter set.